JPH0124939Y2 - - Google Patents
Info
- Publication number
- JPH0124939Y2 JPH0124939Y2 JP17819682U JP17819682U JPH0124939Y2 JP H0124939 Y2 JPH0124939 Y2 JP H0124939Y2 JP 17819682 U JP17819682 U JP 17819682U JP 17819682 U JP17819682 U JP 17819682U JP H0124939 Y2 JPH0124939 Y2 JP H0124939Y2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- base
- conductivity type
- zener diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17819682U JPS5981046U (ja) | 1982-11-24 | 1982-11-24 | ダ−リントントランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17819682U JPS5981046U (ja) | 1982-11-24 | 1982-11-24 | ダ−リントントランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5981046U JPS5981046U (ja) | 1984-05-31 |
JPH0124939Y2 true JPH0124939Y2 (en]) | 1989-07-27 |
Family
ID=30386946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17819682U Granted JPS5981046U (ja) | 1982-11-24 | 1982-11-24 | ダ−リントントランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5981046U (en]) |
-
1982
- 1982-11-24 JP JP17819682U patent/JPS5981046U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5981046U (ja) | 1984-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH02126669A (ja) | 複合mosトランジスタと自由輪ダイオード | |
JPH0324791B2 (en]) | ||
JPH0793383B2 (ja) | 半導体装置 | |
US5907174A (en) | Electrostatic discharge protecting transistor | |
JPH0124939Y2 (en]) | ||
US5497011A (en) | Semiconductor memory device and a method of using the same | |
JPH04280670A (ja) | スイッチ回路およびゲート電圧クランプ型半導体装置 | |
JPS6042630B2 (ja) | 半導体装置 | |
JPH0414929Y2 (en]) | ||
JPH0342680Y2 (en]) | ||
JPS625346B2 (en]) | ||
JPS59181044A (ja) | 入力保護回路 | |
JPS58173A (ja) | 半導体スイツチの製造方法 | |
JPS5819137B2 (ja) | 相補型mosトランジスタ | |
JPS60254651A (ja) | Cmos回路の入力保護回路 | |
JP2542533Y2 (ja) | サージ吸収回路 | |
JPS59124754A (ja) | 集積回路装置 | |
JPH0471274A (ja) | 半導体集積回路 | |
JPH04330773A (ja) | 半導体装置 | |
JPH0410228B2 (en]) | ||
JPS6130297Y2 (en]) | ||
JPS6141247Y2 (en]) | ||
JPH0656850B2 (ja) | 半導体装置 | |
JPH0110938Y2 (en]) | ||
JPH0440867B2 (en]) |